ictransistor.com

 

 transistor
 tran.sis.tor
 AHD:[tr2n-z1s“t…r, -s1s“-] 
 D.J.[tr#n6zist*, -6sis-]
 K.K.[tr#n6z!st+, -6s!s-]
 n.（名词）
(1)
 A small electronic device containing a semiconductor and having at least three electrical contacts, used in a circuit as an amplifier, a detector, or a switch.
 晶体管：一种小型电子装置，包含一个半导体和至少三个电接头并构成一个电路，用作扩音器、检波器或开关
(2)
 A transistor radio.
 晶体管收音机
 
语源
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(1)
 trans(fer) 
 trans(fer)
(2)
 (res)istor 
 (res)istor
 
现代英汉词典
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 transistor
 [trAn5sIstE(r), trB:-]
 n.
(1)
 晶体管
(2)
 晶体管收音机 (= transistor radio)
 
现代英汉综合大辞典
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 transistor
 [trAn5zistE]
 n.
 【无】晶体(三极)管; 半导体(三极)管, 晶体管[半导体]收音机
 a transistor radio
 晶体管[半导体]收音机
 
继承用法
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 transistor-driven
 adj.
 用晶体管激励的

 transistored
 adj.
 晶体管(化)的, 用晶体管装配成的
 
特殊用法
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 alloy bipolar transistor
 合金双极晶体管

 alloy(ing) junction transistor
 合金结晶体管

 alloy type transistor
 合金型晶体管

 alloy-diffused transistor
 扩散合金型晶体管

 alloyed transistor
 合金(型)晶体(三极)管

 analogue [analogous] transistor
 类比晶体管(与三极电子管特性相似的晶体三极管)

 annular transistor
 环形区晶体管

 avalanche transistor
 电子雪崩晶体管(利用雪崩现象而放大电流的面结合型晶体管)

 back-contact transistor
 背面接触式晶体管

 bead transistor
 熔珠[珠状]晶体管

 beam lead transistor
 梁式引线晶体管

 bidirectional transistor
 双向晶体管

 bidirectional bipolar transistor
 双向[对称]双极晶体管, 对称晶体管

 bipolar transistor
 双极(性)晶体管, 场效应晶体管

 bipolar junction transistor
 双极结晶体管

 bonded-barrier transistor
 键合阻挡层晶体管

 broad band transistor
 宽(频)带晶体管

 carrier drift transistor
 载流子漂移型晶体管

 channel transistor
 沟道晶体管

 charge-storage transistor
 电荷存储晶体管

 chip transistor
 片状晶体管

 chopper transistor
 断路器晶体管

 coaxial transistor
 共轴型晶体管

 common-drain field-effect transistor
 共漏极场效应晶体管

 common-emitter transistor
 共发射极晶体管

 common-emitter junction transistor
 共发射极(结)晶体管

 common-gate field-effect transistor
 共栅极场效应晶体管

 common-source field-effect transistor
 共源极场效应晶体管

 complementary transistor
 互补晶体管

 complementary unijunction transistor
 互补单结晶体管

 computer transistor
 计算机用晶体管

 conductivity modulation transistor
 电导率调制晶体管

 coupled transistor
 耦联晶体管

 depletion layer transistor
 耗尽层型晶体管, 过渡层晶体管

 depletion-mode field-effect transistor
 耗尽型场效应管

 diffused base transistor
 扩散底层[基极型]晶体管(一种高频 晶体管)

 diffused emitter-collector transistor
 扩散发射极-集电极晶体管

 diffused junction transistor
 扩散结晶体管

 diffused-alloy transistor
 扩散合金晶体管

 diffused-mesa transistor
 扩散台面型晶体管

 diffusion (type) transistor
 扩散型晶体管

 diffusion base plane transistor
 扩散基极平面晶体管

 diode-connected transistor
 二极管接法晶体管

 discrete transistor
 分立式晶体管

 discrete passivated epitaxial transistor
 分立钝化外延晶体管

 dot alloy mesa transistor
 点接触合金台面型晶体管

 dot mesa transistor
 点状台面晶体管

 double bonding transistor
 双键晶体管

 double epitaxial IC transistor
 双外延集成电路晶体管

 double surface transistor
 双面晶体(三极)管

 double-base transistor
 双基极晶体管

 double-diffused transistor
 双扩散型晶体管

 double-doped transistor
 双重掺杂晶体管

 double-emitter chopper transistor
 双发射极斩波晶体管

 drift transistor
 漂移晶体管

 driver transistor
 激励晶体管

 dual-emitter transistor
 双发射极晶体管

 electrochemical transistor
 电化学晶体管

 emitter base diffusion transistor
 发射极-基极扩散晶体管

 enhancement transistor
 增强型晶体管

 enhancement-mode field effect transistor
 增强型场效应晶体管

 epitaxial transistor
 外延型晶体管

 epitaxial diffused-junction transistor
 外延生长扩散结式晶体管

 field effect transistor
 场效应晶体管

 germanium transistor
 锗晶体管

 inductive transistor
 感应型晶体管

 insulated-gate field effect transistor
 绝缘栅场效应晶体管

 interdigitated transistor
 交指型晶体管

 intrinsic transistor
 本征晶体管

 intrinsic barrier transistor
 本征阻挡层晶体管

 inverse transistor
 换接晶体管

 inverter transistor
 倒相晶体管

 isolated gate field effect transistor
 隔离栅场效应晶体管

 isolated-input transistor
 输入隔离的晶体管

 isoplanar transistor
 等平面晶体管

 junction transistor
 结式晶体管; 面结型晶体管

 junction photo transistor
 面接合型光电晶体管

 junction field effect transistor
 结型场效应晶体管

 junction-gate field-effect transistor
 结栅场效应晶体管

 junction-type field effect transistor
 面结型场效应晶体管

 lateral complementary transistor
 横向[侧向]互补晶体管

 lateral p-n-ptransistor
 横向p-n-p型晶体管

 light-activated programable unijunctiontransistor
 光敏可编程序单结晶体管

 liquid-cooledtransistor
 液冷晶体管

 low-temperaturepassivationtransistor
 低温钝化晶体管

 magnetically bias(s)ed transistor
 磁偏压晶体管

 main flip-flop transistor
 触发器主晶体管

 matched pair transistor
 配对晶体管

 matching transistor
 匹配晶体管

 meltback transistor
 回熔晶体管

 melt-quench transistor
 (回熔区)骤冷晶体管

 mesatransistor
 台面式晶体管

 mesh bipolartransistor
 网状双极晶体管

 metal-basetransistor
 金属基极晶体管

 metal-insulator-piezoelectric semiconductor transistor
 金属-绝缘(物)压电半导体晶体管

 Metal-Oxide-Semiconductor (MOS) transistor
 金属氧化物半导体晶体管

 metal-semiconductor field effect transistor
 金属-半导体场效应晶体管

 microalloy diffused transistor
 微合金扩散型晶体管

 microdisk transistor
 微片型晶体管

 miniature planar transistor
 小型平面晶体管

 multichannel field-effect transistor
 多沟道场效应管

 multiemitter transistor
 多发射极晶体管

 non-symmetric transistor
 非对称晶体管

 normal transistor
 正常晶体管

 optical transistor
 光学晶体管, 光敏晶体管

 overlay transistor
 覆盖式晶体管

 oxide masked planar transistor
 氧化物掩模平面晶体管

 packaged transistor
 密封式[封装]晶体管

 pair transistor
 双晶体管

 parasitic-PNP transistor
 寄生PNP晶体管

 passivation transistor
 钝化晶体管

 passivation planar transistor
 钝化平面晶体管

 pentode transistor
 晶体五极管

 photon-coupled transistor
 光子耦合晶体管

 planar transistor
 平面(型)晶体管

 planar epitaxial transistor
 平面型外延晶体管

 planar IC transistor
 平面型集成电路晶体管

 plastic-packaged power transistor
 塑料封装功率晶体管

 point transistor
 点式晶体管

 point-contact transistor
 点接触型晶体管

 point-to-point transistor
 点接触型晶体管

 post alloy diffusion transistor
 合金再扩散晶体管

 power transistor
 功率(晶体)管

 precharge transistor
 预充电晶体管

 programmable unijunction transistor
 可编程序单结晶体管

 pulse transistor
 脉冲晶体管

 punch through avalanche transistor
 穿通雪崩晶体管

 push-pull transistor
 推挽晶体管

 rate-grown transistor
 变速生长晶体管

 reactance transistor
 电抗晶体管

 remote cutoff transistor
 遥截止晶体管

 resin mold type transistor
 树脂模盘型晶体管

 resonant-gate transistor
 谐振控制式晶体管, 谐振栅晶体管

 sealed transistor
 封闭式晶体管

 shallow diffused transistor
 浅扩散晶体管

 silicon transistor
 硅晶体管

 silicon fusion transistor
 硅熔接晶体管

 silicon junction transistor
 面接合型硅晶体管

 silicon photo transistor
 硅光电晶体管

 silicon planar transistor
 硅平面型晶体管

 silicon planar epitaxial transistor
 硅平面外延晶体管

 silicon unijunction transistor
 单触点硅晶体管, 单结硅晶体管

 stable transistor
 稳定晶体管

 steady-state transistor
 稳态晶体管

 stored charge transistor
 存储电荷晶体管

 stud transistor
 柱式晶体三极管

 supergrown transistor
 超生长型晶体管

 super-mixer transistor
 超高混频晶体管

 surface-barrier transistor
 面垒晶体管; 表面势垒层晶体管

 surface-charge transistor
 表面电荷晶体管

 surface-controlled avalanche transistor
 可控表面雪崩晶体管

 switch(ing) transistor
 开关晶体管

 symmetrical transistor
 对称晶体管

 tandem transistor
 双晶体三极管

 tetrode transistor
 四极晶体管

 thin-film transistor
 薄膜晶体管

 thin-film insulated gate transistor
 薄膜绝缘栅晶体管

 three-junction transistor
 三结晶体管

 thyratron transistor
 晶体闸流管

 transit-time transistor
 (利用电子)渡越时间(的)晶体管

 triode transistor
 晶体三极管

 twin transistor
 双晶体管

 two-emitter transistor
 双发射极晶体管

 unformed point-contact transistor
 未经冶成的点接触晶体管

 unijunction transistor
 单结晶体管

 unijunction switchingtransistor
 单结开关晶体管

 unipolar transistor
 单极晶体管, 场效应晶体管

 unipolar field effect type transistor
 单极场效应型晶体管

 unit transistor
 单位晶体管

 universal transistor
 通用晶体管

 unsymmetric transistor
 不对称晶体管

 vertical complementary transistor
 纵向互补晶体管

 very-high power transistor
 特高功率晶体管

 video output transistor
 视频输出晶体管

 wedge-type transistor
 楔型晶体管
 
[七国语言]英汉电子大词典
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 transistor
 晶体管, 半导体三极管
 
[七国语言]英汉电子工程大词典
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 transistor
 晶体三极管
 
[七国语言]英汉化学大词典
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 transistor
 晶体管
 
[七国语言]英汉机械大词典
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 transistor
 晶体三极管
 
[七国语言]英汉矿业大词典
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 transistor
 晶体管
 
[七国语言]英汉物理大词典
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 transistor
 晶体管, 半导体三极管
 
[七国语言]英汉信息大词典
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 transistor
 晶体管
 
[七国语言]英汉原子能大词典
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 transistor
 晶体管
 
英汉双解计算机词典
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 transistor

 晶体管；［电晶体］
 In electronics, a device manufactured from semiconductor material that can be used to control a current flow in a circuit. There are two basic forms, bipolar and unipolar. The bipolar comprises a sandwich of n-p-n or p-n-p semiconductor materials with three terminals, emitter, base and collector, the current flow comprises both positive and negative carriers. In unipolar transistors the terminals are source, gate and drain and the current flow is by majority carrier only.
 在电子技术中一种由半导体材料制成的电子器件，可以用来控制电路中的电流。它分为双极 型和单极型两种型式。双极型晶体管由一块分层的n-p-n或p-n-p半导体材料组成，具有发射极、基 极和集电极三条引接端，其电流是由正、负两种载流子共同产生的。在单极型晶体管中，引接端 叫作源极、栅极和漏极，其电流是由多数载流子产生的。
 
美国传统词典
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 transistor
 tran.sis.tor
 AHD:[tr2n-z1s“t…r, -s1s“-] 
 D.J.[tr#n6zist*, -6sis-]
 K.K.[tr#n6z!st+, -6s!s-]
 n.
(1)
 A small electronic device containing a semiconductor and having at least three electrical contacts, used in a circuit as an amplifier, a detector, or a switch.
(2)
 A transistor radio.
 

NVIDIA Brings New World of Gaming to Notebook PCs

 

Industry-Leading Performance and Robust PhysX Advances Notebook Visual Computing

NVIDIA Corporation has unveiled a new era of notebook PC gaming, featuring advanced rendering and physics effects that will transform gaming beyond what consumers know today. Enabling this evolution is a new generation of notebook PCs equipped with NVIDIA’s newest GeForce 9800M and 9700M GPUs and featuring NVIDIA’s PhysX physics engine. Perhaps the most significant advancements in PC gaming since DirectX 9, the new GPUs and PhysX will let notebook gamers enjoy the latest games in all their glory, experiencing ultra-realistic graphics and physical effects that mimic the real world, transforming their gaming into a truly cinematic experience. GeForce GPUs, with their superior performance, are the overwhelming choice of gamers and gaming notebook makers worldwide.

The improved performance and PhysX support of the new GeForce 9800M and 9700M GPUs are expected to continue this trend, powering the lion’s share of the next-generation gaming notebooks from top names in the PC industry. Toshiba is the first of many top-tier notebook makers to announce notebooks using the new GeForce GPUs.

“Toshiba has been delivering superior visuals for laptops with GeForce graphics ever since NVIDIA launched its first notebook GPU. This combination helped to create Toshiba’s successful line of powerful gaming laptops with GeForce and SLI technology,” said Yasuhisa Arabiki, Senior Manager, PC Product Planning Department, Personal Computer & Network Company, Toshiba Corporation. “Toshiba is continuing its commitment to deliver a great gaming experience by featuring GeForce 9800M GTX and GeForce 9700M GTS throughout the Qosmio X300/X305 Series.”

The GeForce 9M Series GPUs, with their parallel processing design, are ushering in a new generation of ultra-realistic games by being the only GPUs to support PhysX technology. The world’s most pervasive physics engine, PhysX technology is being used by more than 25,000 developers worldwide and is already delivering dynamic 3D realism to more than 140 games across multiple platforms. With PhysX technology, developers can incorporate effects such as rigid body dynamics, collision detection, and cloth simulation, dramatically changing the way the games are played and how the on-screen stories unfold, and then accelerating those effects using the processing power of the GPU.

“We are using the PhysX API in all of our 3D games including Brothers in Arms, Aliens: Colonial Marines, and Borderlands,” said Corrinne Yu, Director of Platform Technology at Gearbox Software. “Going forward, it just makes sense to leverage the GPU parallel architecture for physics. This enables GPU acceleration for everything from rigid body collision, vehicle physics, collision with destructible pieces, and numerous simulation effects. Gamers will be able to experience characters, objects, and effects that dynamically move and interact in their environments as they do in real life.” The advantages of a GeForce 9M Series GPU in your notebook don’t stop with games.

Software developers are also harnessing the architectural advantages of GPUs to speed up complex processing in commonly used, non-game applications. Tasks that used to take hours, like converting digital video for a portable video player, can now be performed in minutes. Other tasks like high-resolution photo editing, where wait times interrupt the creative flow, can be done in real time on a GPU, like one of the GeForce 9M Series. Five versions of the new GPUs are available. At the ultra-high-end is the GeForce 9800M GTX, GeForce 9800M GTS, and GeForce 9800 GT. These are joined by GeForce 9700M GTS and GeForce 9700M GT flavors.

The new NVIDIA GeForce 9800M and GeForce 9700M GPUs feature:

• NVIDIA’s PhysX technology for real-time game physics calculations
• 112 processing cores for compute-intensive tasks like video conversion and transcoding
• New lightning-fast graphics engine for unprecedented performance, extraordinarily detailed environments, and film-quality game effects
• Support for NVIDIA SLI multi-GPU configurations for the best gaming experience on a notebook PC
• Support for Hybrid SLI technology for longer battery life, cooler operation, and lower noise
• PureVideo HD video processing features for improved color and contrast when playing back video
• Full support for the latest Blu-ray advancements, including BD-Live and dual-stream video playback
• Support for the new MXM version 3.0 graphics module specification

The new GeForce 9800M and GeForce 9700M Series GPUs will be available from over 20 notebook companies worldwide. In addition to Toshiba, other top-tier makers are expected to announce notebooks featuring the new GPUs in the coming months. Gaming notebooks have also been announced from regional PC companies such as Sager, Pioneer Computers Australia, Zepto, rock, Novatech, XXODD, Chiligreen, Multirama, Plaisio, Ergo, Cioce, Insys, Infinity, Cybersystem, and Cizmo. For more information about the GeForce 9M Series, PhysX technology, and parallel processing with the GPU, please visit www.nvidia.com.

 

MSI Readies Latest N9800GT and N9500GT Series Graphics Cards

MSI proudly unveils its latest N9800GT and N9500GT series graphics cards. Both MSI N9800GT and N9500GT series are perfect combination of performance and price, either for graphics-hungry gaming or HD movie playback usage model. The SLI-Ready MSI N9800GT series comes with 112 processor cores and a 256-bit high speed frame buffer. You can enjoy industry-leading features such as NVIDIA PhysX technology that brings your games to real and HybridPower for optimal power management. And with MSI N9500GT Series goodness, you can enjoy the best 3D experience in Windows Vista and watch the finest high-definition movie with lowest power draw.

NVIDIA HybridPower and PhysX Ready

MSI N9800GT series supports the NVIDIA PhysX technology which enables a totally new class of physical gaming interaction for a more dynamic and realistic experience. With the power of the N9800GT GPUs’ unified architecture and NVIDIA’s new GPU PhysX technology, you can experience convincing facial animation, multiple ultra?high polygon characters in complex environments, and fully simulated physical effects such as weather and explosions that deliver a truly immersive and dynamic 3D gaming experience. MSI N9800GT series graphics card brings your 3D games to life.

NVIDIA HybridPower technology delivers graphics performance when you need it and low power operation when you don’t. HybridPower technology lets you switch from your MSI N9800GT series graphics card to your high quality MSI K9N2 series motherboard GPU when running less graphically intensive applications for a silent, low power PC experience.

Up to 3X performance increase over last-gen

With MSI N9500GT series, playing the latest immersive PC games won’t cost you a bundle. Get the most gaming horsepower ever released in a graphics card and experience popular gaming titles with up to a 3X performance increase over the comparable 8 Series GPU – GeForce 8500GT.

Native HDMI interface built-in ready for extreme HD playback

MSI N9500GT series provides a premium 512MB and 1GB larger graphics frame buffer and also supports native HDMI interface. With MSI’s all new N9500GT-MD512 and N9500GT-MD1G series graphics cards, you can experience extremely high quality audio and video enjoyment without any hassle or installation.

Outstanding Omni-directional curving grooves

MSI N9500GT series applies the best air conducting heatsink design, the omni-directional curving grooves. Through precise calculation, the omni-directional curved grooves design extends air contacting surface than straight-line groove by an enhancing rate of 30%. Also, it makes airflow cover nearly all the components onboard and spread airstreams evenly in chassis, resulting to a much better heat balance effect than normal cooler.

Unisantis and Institute of Microelectronics to Jointly Develop Breakthrough Three-Dimensional Transistor in Singapore

World-class Japanese technologist Fujio Masuoka to spearhead team for developing Surrounding Gate Transistor

A breakthrough transistor – the fundamental building block of integrated circuit (IC) chips used in electronic devices – that promises a significant increase in computing power will be engineered in Singapore.

Leading technology research and development company Unisantis Electronics (Japan) Ltd and the Institute of Microelectronics (IME) today announced a collaborative research agreement to develop the world’s first three-dimensional transistor locally.

A team of researchers will be assembled in Singapore to develop the device, known as the Surrounding Gate Transistor (SGT). The agreement represents a world coup for Singapore that puts the country firmly on the global stage for cutting-edge semiconductor research.

The team will be headed by Unisantis’ chief technology officer Fujio Masuoka. A world-renowned scientist, Prof Masuoka invented the flash memory storage format that allows handheld gadgets like digital cameras and MP3 players to retain stored information even after they are switched off. He has also been involved in the research and development into numerous types of computing memory devices, including programmable read-only memory and random access memory.

According to Prof Masuoka, the SGT comprises a vertical silicon pillar surrounded by memory cells, electrical contacts and other components. Such a design methodology greatly reduces the distance that electrons – which transmit information-bearing electrical signals – must travel within the SGT.

Next-generation IC chips fabricated with the SGT could be up to 10 times faster than existing chips built using conventional, two dimensional transistors with horizontally-arranged components. In addition, SGT-based chips could generate less heat and cost less to produce compared to existing ones.

“The SGT also allows further improvements in silicon-based semiconductors, in terms of transistor size and processing speed, for at least 30 more years before the theoretical limits are reached. Such improvements are necessary for new-generation IC chips to meet the computing power demanded by IT products and computing networks of ever-increasing functionality and complexity,” said Prof Masuoka, who has been awarded the prestigious 2007 Medal with Purple Ribbon by Emperor Akihito of Japan and the 2005 Innovation Award by The Economist.

With the Unisantis-IME collaboration, Prof Masuoka – who has been working on the SGT for 20 years – will bring his considerable expertise in semiconductor electronics and related fields to Singapore